Current regulating semiconductor integrated circuit device and fabrication method of the same
US5663589A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Sep 28, 1994 |
| Grant date | Sep 2, 1997 |
| Priority date | — |
| Expiry date | Sep 28, 2014 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S257/91
Abstract
A semiconductor integrated device having a current regulating diode may be substantially reduced in size and improved in performance by forming the current regulating diode of a plurality of MOS transistors each having a gate, a drain region, and a source region formed in a semiconductor substrate, the source regions and the substrate regions being electrically coupled to each other, the drain regions of at least two of the MOS transistors being electrically coupled, and the source regions of each of the MOS transistors being electrically coupled, the coupled drain regions, the coupled source regions, and the coupled gates forming a drain terminal, a source terminal and a gate terminal, respectively. In order to set a desired regulated current, selected coupling lines in the current regulating diode may be cut. This may be accomplished, for example, by measuring a first current which flows in the drain terminal while applying a first voltage to the gate terminal and a second voltage to the drain terminal relative to an electric potential of the source terminal, then measuring a second current which flows in the drain terminal while applying a third voltage to the gate terminal and …
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.