Jun Osanai
72Patents
13h-index
34Co-inventors
84Inventor score
Filing activity: May 8, 1992 → Feb 4, 2014
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6037627A | MOS semiconductor device | Electricity | 66 | Expired |
| US5663589A | Current regulating semiconductor integrated circuit device and fabrication method of the same | Emerging Cross-Sectional Technologies | 41 | Expired |
| US6380037B1 | Method of manufacturing a semiconductor integrated circuit device | Electricity | 25 | Expired |
| US6844578B2 | Semiconductor integrated circuit device and manufacturing method therefor | Electricity | 24 | Expired |
| US6465846B1 | Semiconductor integrated circuit device having trench-type photodiode | Emerging Cross-Sectional Technologies | 23 | Expired |
| US6511885B2 | Vertical MOS transistor and method of manufacturing the same | Electricity | 21 | Expired |
| US5905291A | MISFET semiconductor integrated circuit device | Electricity | 20 | Expired |
| US5486716A | Semiconductor integrated circuit device with electrostatic damage protection | Electricity | 20 | Expired |
| US6369409B1 | Semiconductor device and method of manufacturing the same | Electricity | 18 | Expired |
| US6495884B2 | Vertical MOS transistor | Electricity | 18 | Expired |
| US6534836B1 | MOSFET semiconductor device | Electricity | 17 | Expired |
| US6653694B1 | Reference voltage semiconductor | Electricity | 16 | Expired |
| US6013940A | Poly-crystalline silicon film ladder resistor | Electricity | 15 | Expired |
| US6426258B1 | Method of manufacturing a semiconductor integrated circuit device | Electricity | 12 | Expired |
| US6768174B2 | Complementary MOS transistors having p-type gate electrodes | Electricity | 12 | Expired |
| US6801033B2 | Voltage converter having switching element with variable substrate potential | Electricity | 12 | Expired |
| US5620922A | Method for fabricating CMOS device having low and high resistance portions and wire formed from a single gate polysilicon | Electricity | 11 | Expired |
| US6236084A | Semiconductor integrated circuit device having double diffusion insulated gate field effect transistor | Electricity | 11 | Expired |
| US6586958B2 | Voltage converter having switching element with variable substrate potential | Electricity | 11 | Expired |
| US6097064A | Semiconductor device and manufacturing method thereof | Electricity | 11 | Expired |
| US6525376B1 | High withstand voltage insulated gate N-channel field effect transistor | Electricity | 10 | Expired |
| US5696400A | MOS-type semiconductor integrated circuit device | Electricity | 10 | Expired |
| US6777752B2 | Complementary MOS semiconductor device | Electricity | 8 | Expired |
| US6255700A | CMOS semiconductor device | Electricity | 7 | Expired |
| US5971836A | Grinding machine | Electricity | 7 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.