Method of forming an interband lateral resonant tunneling transistor with single narrow gate electrode
US5665618A · kind A · utility
17Cited by
19References
7Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 27, 1995 |
| Grant date | Sep 9, 1997 |
| Priority date | — |
| Expiry date | Jan 27, 2015 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S977/936
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
This invention describes a nanometer scale interband lateral resonant tunneling transistor, and the method for producing the same, with lateral geometry, good fanout properties and suitable for incorporation into large-scale integrated circuits. The transistor is of a single gate design and operation is based on resonant tunneling processes in narrow-gap nanostructures which are highly responsive to quantum phenomena. Such quantum-effect devices can have very high density, operate at much higher temperatures and are capable of driving other devices.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.