Jerry R. Meyer
52Patents
12h-index
38Co-inventors
84Inventor score
Filing activity: Feb 28, 1980 → Aug 2, 2022
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US5804475A | Method of forming an interband lateral resonant tunneling transistor | Emerging Cross-Sectional Technologies | 65 | Expired |
| US5793787A | Type II quantum well laser with enhanced optical matrix | Electricity | 50 | Expired |
| US5799026A | Interband quantum well cascade laser, with a blocking quantum well for improved quantum efficiency | Electricity | 38 | Expired |
| US6826223B1 | Surface-emitting photonic crystal distributed feedback laser systems and methods | Electricity | 25 | Expired |
| US6643305B2 | Optical pumping injection cavity for optically pumped devices | Electricity | 23 | Expired |
| US6448642B1 | Pressure-bonded heat-sink system | Electricity | 22 | Expired |
| US9612398B2 | Ultra-broadband photonic integrated circuit platform and ultra-broadband photonic integrated circuit | Physics | 22 | Active |
| US5665618A | Method of forming an interband lateral resonant tunneling transistor with single narrow gate electrode | Emerging Cross-Sectional Technologies | 17 | Expired |
| US10297699B2 | In-plane resonant-cavity infrared photodetectors with fully-depleted absorbers | Physics | 13 | Active |
| US4558923A | Picosecond bistable optical switch using two-photon transitions | Physics | 13 | Expired |
| US7256417B2 | Type II quantum well mid-infrared optoelectronic devices | Electricity | 12 | Expired |
| US5477377A | Optical switches and detectors utilizing indirect narrow-gap superlattices as the optical materials | Physics | 12 | Expired |
| US9960571B2 | Weakly index-guided interband cascade lasers with no grown top cladding layer or a thin top cladding layer | Electricity | 11 | Active |
| US8125706B2 | High-temperature interband cascade lasers | Electricity | 9 | Active |
| US4346348A | Laser technique for accurately determining the compensation density in N-type narrow gap semiconductor | Physics | 8 | Expired |
| US5654558A | Interband lateral resonant tunneling transistor | Emerging Cross-Sectional Technologies | 7 | Expired |
| US8879593B2 | Epitaxial-side-down mounted high-power semiconductor lasers | Electricity | 6 | Active |
| US9923338B2 | Interband cascade lasers with low-fill-factor top contact for reduced loss | Electricity | 6 | Active |
| US6282761A | Heat sink pressure clip | Emerging Cross-Sectional Technologies | 5 | Expired |
| US5459321A | Laser hardened backside illuminated optical detector | Physics | 5 | Expired |
| US5789931A | Quantitative mobility spectrum analysis for magnetic field dependent hall and resistivity data | Physics | 5 | Expired |
| US6996152B2 | Photonic-crystal distributed-feedback and distributed bragg-reflector lasers | Electricity | 5 | Expired |
| US8798111B2 | Interband cascade lasers with engineered carrier densities | Electricity | 4 | Active |
| US5724174A | Intersubband electro-optical modulators based on intervalley transfer in asymmetric double quantum wells | Physics | 4 | Expired |
| US11125689B2 | Highly stable semiconductor lasers and sensors for III-V and silicon photonic integrated circuits | Electricity | 4 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.