Method for repairing a defect generated cell using a laser
US5665638A · kind A · utility
1Cited by
2References
2Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jul 7, 1995 |
| Grant date | Sep 9, 1997 |
| Priority date | — |
| Expiry date | Jul 7, 2015 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/94
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The invention provides a method for repairing a defect-generated cell using a laser for disconnecting a defect-generated portion of a fuse conductive line in the fabricating process of semiconductor integrated circuits, characterized in that an insulation layer on the fuse conductive line is isotropically etched partially to a predetermined thickness for the purpose of refracting laser beam incident to the defect-generated portion of the fuse conductive line.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.