Method of forming a dielectric layer structure
US5665658A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Mar 21, 1996 |
| Grant date | Sep 9, 1997 |
| Priority date | — |
| Expiry date | Mar 21, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02282
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming a stable semiconductor device on an at least partially completed semiconductor device including a supporting semiconductor structure of III-V material having a clean and atomically ordered surface to be coated with a dielectric layer structure. A relatively thin layer of Ga.sub.2 O.sub.3 is deposited on the surface by evaporation using a high purity single crystal of material including Ga.sub.2 O.sub.3 and a second oxide, such as MgO or Gd.sub.2 O.sub.3. A second layer of material with low bulk trap density relative to the Ga.sub.2 O.sub.3 is deposited on the layer of Ga.sub.2 O.sub.3 to complete the dielectric layer structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.