Electro-luminescent material, solid state electro-luminescent device and process for fabrication thereof
US5667905A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Oct 17, 1995 |
| Grant date | Sep 16, 1997 |
| Priority date | — |
| Expiry date | Oct 17, 2015 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S428/917
Abstract
An electro-luminescent material and solid state electro-luminescent device comprising a mixed material layer formed of a mixture of silicon and silicon oxide doped with rare earth ions so as to show intense room-temperature photo- and electro-luminescence is described. The luminescence is due to internal transitions of the rare earth ions. The mixed material layer has an oxygen content ranging from 1 to 65 atomic % and is produced by vapor deposition and rare earth ions implant. A separated implant with elements of the V or III column of the periodic table of elements gives rise to a PN junction. The so obtained structure is then subjected to thermal treatment in the range 400.degree.-1100.degree. C.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.