Method for defining a region on a wall of a semiconductor structure
US5668018A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jun 7, 1995 |
| Grant date | Sep 16, 1997 |
| Priority date | — |
| Expiry date | Jun 7, 2015 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/106
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A device and method are described for defining a region on a wall of a semiconductor structure, such as a sidewall of a trench formed in a semiconductor substrate. The method includes the steps of forming a vertical structure above the semiconductor structure and spaced parallel to the wall; providing within the vertical structure an area of one of transparence, reflection or refraction; and projecting light at a given angle to the wall, wherein only a portion of the light passes the vertical structure via the area provided therein to impinge upon the wall of the semiconductor structure, and thereby define the region on the wall. As an alternative, the area can comprise an aperture in the vertical structure such that the vertical structure can be employed as a mask to direct selective ion implantation of the wall.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.