Silicon-silicon-germanium heterojunction bipolar transistor fabrication method
US5668022A · kind A · utility
Assignees
Inventors
Key dates
| Filing date | Aug 23, 1996 |
| Grant date | Sep 16, 1997 |
| Priority date | — |
| Expiry date | Aug 23, 2016 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/072
Abstract
A silicon/silicon-germanium bipolar transistor fabrication method employs a metallic silicide film as an extrinsic base electrode to reduce resistance of the extrinsic base electrode, and to increase a maximum oscillation frequency and cut-off frequency due to its self-aligned structure. The fabrication method enables agglomeration to occur on the side wall of the polycrystalline silicon film connected to the metallic silicide film instead of on the interface between the metallic silicide film and the lower silicon/silicon-germanium film, and leads the extrinsic base electrode to be sandwitched by the insulator films, thereby realizing a constant resistance and also resulting in the application of integrated circuits to a mass production mechanism.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.