Kwang Eui Pyun
23Patents
11h-index
32Co-inventors
67Inventor score
Filing activity: Dec 19, 1994 → Aug 13, 2001
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6392781B1 | High speed semiconductor optical modulator and fabricating method thereof | Performing Operations; Transporting | 62 | Expired |
| US5798277A | Method for fabricating heterojunction bipolar transistor | Emerging Cross-Sectional Technologies | 26 | Expired |
| US5897359A | Method of manufacturing a silicon/silicon germanium heterojunction bipolar transistor | Electricity | 21 | Expired |
| US5962879A | Super self-aligned bipolar transistor | Electricity | 20 | Expired |
| US5668022A | Silicon-silicon-germanium heterojunction bipolar transistor fabrication method | Emerging Cross-Sectional Technologies | 19 | Expired |
| US6204102A | Method of fabricating compound semiconductor devices using lift-off of insulating film | Electricity | 18 | Expired |
| US5696007A | Method for manufacturing a super self-aligned bipolar transistor | Emerging Cross-Sectional Technologies | 15 | Expired |
| US5496779A | Method for fabricating a self-aligned T-gate metal semiconductor field effect transistor | Electricity | 15 | Expired |
| US6190984A | Method for fabricating of super self-aligned bipolar transistor | Electricity | 12 | Expired |
| US6064265A | Gain control circuit for low-noise amplifier | Electricity | 11 | Expired |
| US5856232A | Method for fabricating T-shaped electrode and metal layer having low resistance | Emerging Cross-Sectional Technologies | 11 | Expired |
| US5972232A | Micromirror for a hybrid optoelectronic integrated circuit, a method for manufacturing the same, a micromirror-photodetector assembly and an assembly of hybrid optoelectronic integrated circuit for receiving light | Physics | 9 | Expired |
| US5970328A | Fabrication method of T-shaped gate electrode in semiconductor device | Electricity | 9 | Expired |
| US5885847A | Method of fabricating a compound semiconductor device | Electricity | 9 | Expired |
| US5861327A | Fabrication method of gate electrode in semiconductor device | Electricity | 8 | Expired |
| US5702975A | Method for isolating semiconductor device | Electricity | 8 | Expired |
| US6614086B2 | Avalanche photodetector | Electricity | 8 | Expired |
| US5989961A | Fabrication method of a vertical channel transistor | Electricity | 6 | Expired |
| US6057736A | Gain controlled amplifier | Electricity | 6 | Expired |
| US5939954A | Equivalent circuit of package ground terminal paddle | Electricity | 5 | Expired |
| US5862144A | Method for correcting a high frequency measurement error | Physics | 5 | Expired |
| US6100753A | Bias stabilization circuit | Physics | 3 | Expired |
| US5895930A | Infrared photodetector with doping superlattice structure | Performing Operations; Transporting | 2 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.