Method for manufacturing a semiconductor acceleration sensor device
US5668033A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | May 17, 1996 |
| Grant date | Sep 16, 1997 |
| Priority date | — |
| Expiry date | May 17, 2016 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/012
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
On a silicon wafer there is formed a movable gate MOS transistor (sensing element: functional element). A bonding frame consisting of a silicon thin film is patterned around an element formation region on the surface of the silicon wafer. On a cap forming silicon wafer there is projectively provided a leg portion on the bottom surface of which a bonding layer consisting of a gold film is formed. The cap forming silicon wafer is disposed on the silicon wafer, whereupon heating with respect thereto is performed at a temperature equal to higher than a gold/silicon eutectic temperature to thereby make bondage between the bonding frame of the silicon wafer and the bonding layer of the cap forming silicon wafer. Thereafter, the both wafers are diced in chip units.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.