Method of forming a tungsten plug in a semiconductor device
US5668064A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Feb 23, 1996 |
| Grant date | Sep 16, 1997 |
| Priority date | — |
| Expiry date | Feb 23, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention discloses a method of forming a tungsten plug within a via hole in which it sequentially forms a barrier metal layer and a tungsten layer on a insulating film including the via hole, forms a photoresist pattern of which size is enough to cover the via hole on the tungsten layer in the upper side of the via hole, etching the tungsten layer by sequentially performing an isotropic etching process and an anisotropic etching process using the photoresist pattern as an etching mask and, after the photoresist pattern is removed, etching the projections of the tungsten layer by performing the anisotropic etching process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.