Ju-Il Lee
32Patents
11h-index
24Co-inventors
75Inventor score
Filing activity: Feb 23, 1996 → May 11, 2020
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6184055A | CMOS image sensor with equivalent potential diode and method for fabricating the same | Electricity | 105 | Expired |
| US6180969A | CMOS image sensor with equivalent potential diode | Electricity | 79 | Expired |
| US6369417B1 | CMOS image sensor and method for fabricating the same | Electricity | 59 | Expired |
| US8629023B2 | CMOS image sensor having double gate insulator therein and method for manufacturing the same | Electricity | 35 | Active |
| US7183129B2 | Method for manufacturing CMOS image sensor using spacer etching barrier film | Electricity | 34 | Expired |
| US6706550B2 | Photodiode having a plurality of PN injections and image sensor having the same | Electricity | 29 | Expired |
| US7847326B2 | Backside illuminated image sensor | Electricity | 27 | Active |
| US6489643B1 | Photodiode having a plurality of PN junctions and image sensor having the same | Electricity | 25 | Expired |
| US6744590B2 | Seek trajectory adaptation in sinusoidal seek servo hard disk drives | Physics | 19 | Expired |
| US6835590B2 | Method of manufacturing image sensor for reducing dark current | Electricity | 14 | Expired |
| US6348361B1 | CMOS image sensor having enhanced photosensitivity and method for fabricating the same | Electricity | 11 | Expired |
| US7129532B2 | Image sensor and method for fabricating the same | Electricity | 11 | Expired |
| US6838298B2 | Method of manufacturing image sensor for reducing dark current | Electricity | 10 | Expired |
| US6624404B2 | CMOS Image sensor having enhanced photosensitivity and method for fabricating the same | Electricity | 8 | Expired |
| US5668064A | Method of forming a tungsten plug in a semiconductor device | Electricity | 7 | Expired |
| US6974715B2 | Method for manufacturing CMOS image sensor using spacer etching barrier film | Electricity | 7 | Expired |
| US7358552B2 | Complementary metal-oxide-semiconductor image sensor and method for fabricating the same | Electricity | 6 | Expired |
| US6917489B2 | Apparatus and method for performing seek-servo routine of hard disk drive | Physics | 6 | Expired |
| US8163591B2 | Backside illuminated image sensor | Electricity | 4 | Active |
| US7166484B2 | Method for fabricating image sensor with inorganic microlens | Electricity | 4 | Expired |
| US7965459B2 | Wavelets-based detection of proximity between a sensor and an object | Physics | 4 | Active |
| US7348262B2 | Method for fabricating module of semiconductor chip | Electricity | 4 | Expired |
| US7691663B2 | CMOS image sensor having double gate insulator therein and method for manufacturing the same | Electricity | 3 | Active |
| US8143626B2 | CMOS image sensor having double gate insulator therein | Electricity | 3 | Active |
| US6410901B1 | Image sensor having blooming effect preventing circuitry | Electricity | 3 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.