Power semiconductor component with transparent emitter and stop layer
US5668385A · kind A · utility
15Cited by
8References
23Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 30, 1995 |
| Grant date | Sep 16, 1997 |
| Priority date | — |
| Expiry date | May 30, 2015 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/142
Abstract
A power semiconductor component is specified which provides for a significant reduction in the thickness of the semiconductor substrate (1) whilst at the same time optimizing the switching losses. A transparent emitter (6) and a stop layer (7) are arranged to provide a thin semiconductor and optimized switching losses. The means can be used both in semiconductor switches such as IGBT, MCT or GTO and in diodes.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.