Process for the formation of a metal pattern
US5670297A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Nov 9, 1995 |
| Grant date | Sep 23, 1997 |
| Priority date | — |
| Expiry date | Nov 9, 2015 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S430/151
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A process for formation of a metal pattern comprising the steps of forming a silicide metal film on an underlying substrate, forming an anti-reflection film on the underlying substrate on which the silicide metal film is formed, forming a resist film on the anti-reflection film, patterning the resist film by photolithography to form a predetermined pattern, and using the thus patterned resist film as a mask and etching the silicide metal film on the underlying substrate, wherein the optical constants and the thickness of the anti-reflection film are determined to give the smallest standing wave effect at the time of photolithography in accordance with the type of the silicide metal film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.