Controlled recrystallization of buried strap in a semiconductor memory device

US5670805A · kind A · utility

Assignees

• Kabushiki Kaisha Toshiba · JP
• International Business Machines Corporation · US
• Siemens Aktiengesellschaft · DE

Inventors

• Erwin Hammerl · Stormville, US
• Jack A. Mandelman · Stormville, US
• Herbert L. Ho · New Windsor, US
• Junichi Shiozawa · Yokkaichi, JP
• Reinhard Stengl · Stadtbergen, DE

Key dates

• Filing date: May 7, 1996
• Grant date: Sep 23, 1997
• Expiry date: May 7, 2016

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10B12/038

Abstract

A semiconductor memory device includes a trench formed in a semiconductor substrate. Conductive material is formed in the trench and is insulatively spaced from the semiconductor substrate to form a capacitor. A transfer gate transistor includes source/drain regions formed on a surface of the semiconductor substrate and a control gate which is insulatively spaced from a channel region between the source and drain regions. A buried strap electrically connects the capacitor to one of the source/drain regions of the transfer gate transistor. A portion of the buried strap includes recrystallized silicon.