Electrically programmable antifuse

US5670818A · kind A · utility

Assignee

• Actel Corporation · US

Inventors

• Abdul Rahim Forouhi · Cupertino, US
• Esmat Z. Hamdy · Fremont, US
• Chenming Hu · Alamo, US
• John McCollum · Saratoga, US

Key dates

• Filing date: Aug 16, 1994
• Grant date: Sep 23, 1997
• Expiry date: Aug 16, 2014

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L2924/3011
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

In an antifuse and metal interconnect structure in an integrated circuit a substrate has an insulating layer disposed on an upper surface, a first multilayer metal interconnect layer disposed on the insulating layer, and having a first portion forming a lower antifuse electrode and a second portion forming a lower metal interconnect electrode wherein the first portion includes an upper barrier metal layer. An inter-metal dielectric layer is disposed on the lower antifuse and metal interconnect electrodes wherein the inter-metal dielectric layer includes an antifuse via formed therethrough and communicating with said lower antifuse electrode, and a metal interconnect via former therethrough communicating with the lower metal interconnect electrode, An antifuse material layer is disposed in the antifuse via, and a second multilayer metal interconnect layer is disposed on the antifuse material layer and in the upper metal interconnect electrode via and on the lower metal interconnect electrode.