Elimination of pad conditioning in a chemical mechanical polishing process
US5672095A · kind A · utility
42Cited by
3References
26Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 29, 1995 |
| Grant date | Sep 30, 1997 |
| Priority date | — |
| Expiry date | Sep 29, 2015 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB24B37/042
- WIPO fieldMachine tools
- WIPO sectorMechanical engineering
Abstract
A method and apparatus for polishing a film formed over a semiconductor substrate. The substrate is pressed up against an abrasive pad so that the film contacts the pad. The pad has a diameter which is less than approximately two times a diameter of the substrate. While pressure is applied to the back of the substrate, the pad is rotated with respect to the wafer and an abrasive ceria slurry is introduced onto the pad to polish the film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.