Inventor · Portland, OR, US

Ebrahim Andideh

70Patents
19h-index
69Co-inventors
87Inventor score

Filing activity: Jul 21, 1992 → Oct 6, 2017

Most-cited inventions

PatentTitleAreaCited byStatus
US6437444B2 Interlayer dielectric with a composite dielectric stack Electricity 508 Expired
US5953635A Interlayer dielectric with a composite dielectric stack Electricity 288 Expired
US6765273B1 Device structure and method for reducing silicide encroachment Electricity 232 Expired
US6235568A Semiconductor device having deposited silicon regions and a method of fabrication Electricity 182 Expired
US5270264A Process for filling submicron spaces with dielectric Emerging Cross-Sectional Technologies 111 Expired
US6121100A Method of fabricating a MOS transistor with a raised source/drain extension Electricity 86 Expired
US6506692B2 Method of making a semiconductor device using a silicon carbide hard mask Emerging Cross-Sectional Technologies 81 Expired
US6316063A Method for preparing carbon doped oxide insulating layers Chemistry; Metallurgy 51 Expired
US6624032B2 Structure and process flow for fabrication of dual gate floating body integrated MOS transistors Electricity 51 Expired
US6392271B1 Structure and process flow for fabrication of dual gate floating body integrated MOS transistors Electricity 43 Expired
US5672095A Elimination of pad conditioning in a chemical mechanical polishing process Performing Operations; Transporting 42 Expired
US6362091B1 Method for making a semiconductor device having a low-k dielectric layer Electricity 37 Expired
US6274913A Shielded channel transistor structure with embedded source/drain junctions Electricity 35 Expired
US6777759B1 Device structure and method for reducing silicide encroachment Electricity 32 Expired
US6448185B1 Method for making a semiconductor device that has a dual damascene interconnect Electricity 26 Expired
US6518155B1 Device structure and method for reducing silicide encroachment Electricity 25 Expired
US6350670B1 Method for making a semiconductor device having a carbon doped oxide insulating layer Electricity 24 Expired
US6093651A Polish pad with non-uniform groove depth to improve wafer polish rate uniformity Performing Operations; Transporting 22 Expired
US6417098B1 Enhanced surface modification of low K carbon-doped oxide Electricity 19 Expired
US6482754B1 Method of forming a carbon doped oxide layer on a substrate Electricity 18 Expired
US7755124B2 Laminating magnetic materials in a semiconductor device Emerging Cross-Sectional Technologies 18 Active
US6380010B2 Shielded channel transistor structure with embedded source/drain junctions Electricity 17 Expired
US6191050A Interlayer dielectric with a composite dielectric stack Electricity 15 Expired
US7034380B2 Low-dielectric constant structure with a multilayer stack of thin films with pores Electricity 14 Expired
US6677253B2 Carbon doped oxide deposition Electricity 14 Expired

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.