Method of fabricating semiconductor device having stacked layered substrate
US5672518A · kind A · utility
Assignees
Inventors
Key dates
| Filing date | May 7, 1993 |
| Grant date | Sep 30, 1997 |
| Priority date | — |
| Expiry date | May 7, 2013 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/977
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
The invention provides a semi-conductor light valve device and a process for fabricating the same. The device comprises a composite substrate having a supporte substrate, a light-shielding thin film formed on said supporte substrate and semiconductive thin film disposed on the light-shielding thin film with interposing an insulating thin film. A switching element made of a transistor and a transparent electrode for driving light valve are formed on the semiconductive thin film, and the switching element and the transparent electrode are connected electrically with each other. The transistor includes a channel region in the semiconductive thin film and a main gate electrode for controlling the conduction in the channel region, and the light-shielding thin film layer is so formed as to cover the channel region on the side opposite to said channel region, so as to prevent effectively a back channel and shut off the incident light.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.