Method of repetitively imaging a mask pattern on a substrate, and apparatus for performing the method
US5673101A · kind A · utility
15Cited by
11References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 25, 1995 |
| Grant date | Sep 30, 1997 |
| Priority date | — |
| Expiry date | May 25, 2015 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/70675
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method and apparatus for repetitively imaging a mask pattern (C) on a substrate (W) are described. Various parameters of the apparatus and the projection lens system (PL) can be measured accurately and reliably and measuring devices of the apparatus can be calibrated by measuring a latent image of a mark by means of a scanning microscope (LID) forming a diffraction-limited radiation spot (Sp) on the photoresist layer on the substrate (W), in which layer the latent image is formed by means of a projection beam (PB).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.