Nanolithographic method of forming fine lines
US5674409A · kind A · utility
9Cited by
8References
23Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Mar 16, 1995 |
| Grant date | Oct 7, 1997 |
| Priority date | — |
| Expiry date | Mar 16, 2015 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/947
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A nanolithographic method for forming fine features is disclosed. A carrier layer, such as a photoresist, is deposited on a substrate. A relatively large pattern is imposed on the carrier layer by means of conventional photolithographic methods. The carrier layer is then exposed to a maskless etch, such as by ashing in oxygen, such that non-volatile materials within the carrier layer aggregate along the center line of the pattern, forming a residual pattern of significantly reduced width when compared to the original carrier layer pattern.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.