K. Paul Muller
60Patents
15h-index
104Co-inventors
87Inventor score
Filing activity: Sep 24, 1992 → Nov 30, 2020
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6252284A | Planarized silicon fin device | Electricity | 159 | Expired |
| US6432754B1 | Double SOI device with recess etch and epitaxy | Electricity | 122 | Expired |
| US7288445B2 | Double gated transistor and method of fabrication | Electricity | 117 | Expired |
| US7087477B2 | FinFET SRAM cell using low mobility plane for cell stability and method for forming | Emerging Cross-Sectional Technologies | 112 | Expired |
| US6967351B2 | Finfet SRAM cell using low mobility plane for cell stability and method for forming | Emerging Cross-Sectional Technologies | 82 | Expired |
| US5312717A | Residue free vertical pattern transfer with top surface imaging resists | Physics | 67 | Expired |
| US5877061A | Methods for roughening and volume expansion of trench sidewalls to form high capacitance trench cell for high density dram applications | Emerging Cross-Sectional Technologies | 41 | Expired |
| US5891807A | Formation of a bottle shaped trench | Electricity | 37 | Expired |
| US6432829B1 | Process for making planarized silicon fin device | Electricity | 36 | Expired |
| US7645650B2 | Double gated transistor and method of fabrication | Electricity | 29 | Active |
| US6537418B1 | Spatially uniform gas supply and pump configuration for large wafer diameters | Electricity | 25 | Expired |
| US6521949B2 | SOI transistor with polysilicon seed | Electricity | 21 | Expired |
| US6140833A | In-situ measurement method and apparatus for semiconductor processing | Electricity | 20 | Expired |
| US6534351B2 | Gate-controlled, graded-extension device for deep sub-micron ultra-high-performance devices | Electricity | 17 | Expired |
| US6774437B2 | Fin-based double poly dynamic threshold CMOS FET with spacer gate and method of fabrication | Electricity | 15 | Expired |
| US8925339B2 | Cooling system control and servicing based on time-based variation of an operational variable | Mechanical Engineering; Lighting; Heating | 14 | Active |
| US8129267B2 | Alpha particle blocking wire structure and method fabricating same | Electricity | 12 | Active |
| US6463184B1 | Method and apparatus for overlay measurement | Physics | 11 | Expired |
| US7627836B2 | OPC trimming for performance | Physics | 11 | Expired |
| US5956142A | Method of end point detection using a sinusoidal interference signal for a wet etch process | Physics | 10 | Expired |
| US5674409A | Nanolithographic method of forming fine lines | Emerging Cross-Sectional Technologies | 9 | Expired |
| US7888959B2 | Apparatus and method for hardening latches in SOI CMOS devices | Electricity | 9 | Active |
| US8991198B2 | Cooling system control and servicing based on time-based variation of an operational variable | Mechanical Engineering; Lighting; Heating | 8 | Active |
| US6291353A | Lateral patterning | Electricity | 7 | Expired |
| US6913960B2 | Fin-based double poly dynamic threshold CMOS FET with spacer gate and method of fabrication | Electricity | 7 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.