Method of manufacturing an optoelectronic circuit including heterojunction bipolar transistor, laser and photodetector
US5674778A · kind A · utility
40Cited by
6References
3Claims
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Key dates
| Filing date | Jul 9, 1996 |
| Grant date | Oct 7, 1997 |
| Priority date | — |
| Expiry date | Jul 9, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/0264
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
An optoelectronic integrated circuit furnishes a monolithic integration of high-speed transistors, lasers and photodetectors for optoelectronic communication applications. The monolithic device integrates an indium phosphorus (InP) / indium gallium arsenide (InGaAs) emitter-down heterojunction bipolar transistor with an InP/InGaAs quantum well laser and modulator, and a metal-semiconductor-metal photodetector.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.