Bisamido azides of gallium, aluminum and indium and their use as precursors for the growth of nitride films
US5675028A · kind A · utility
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13Claims
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Key dates
| Filing date | Aug 29, 1995 |
| Grant date | Oct 7, 1997 |
| Priority date | — |
| Expiry date | Aug 29, 2015 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC04B2111/00844
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
There are disclosed bisamido azides of gallium (Ga), aluminum (Al), or Indium (In) which when pyrolized in accordance with the invention, produce metal nitride films on a substrate. A representative example of a bisamido azide is bisdimethylamidogallium azide, (CH.sub.3)N).sub.2 GaN.sub.3.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.