Deborah A. Neumayer
85Patents
15h-index
111Co-inventors
87Inventor score
Filing activity: May 30, 1990 → Jan 23, 2020
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6203613A | Atomic layer deposition with nitrate containing precursors | Electricity | 1,154 | Expired |
| US6984591B1 | Precursor source mixtures | Electricity | 631 | Expired |
| US7049247B2 | Method for fabricating an ultralow dielectric constant material as an intralevel or interlevel dielectric in a semiconductor device and electronic device made | Electricity | 521 | Expired |
| US5946551A | Fabrication of thin film effect transistor comprising an organic semiconductor and chemical solution deposited metal oxide gate dielectric | Electricity | 145 | Expired |
| US6172385A | Multilayer ferroelectric capacitor structure | Electricity | 122 | Expired |
| US5981970A | Thin-film field-effect transistor with organic semiconductor requiring low operating voltages | Electricity | 103 | Expired |
| US6888714B2 | Tuneable ferroelectric decoupling capacitor | Electricity | 96 | Expired |
| US6664186B1 | Method of film deposition, and fabrication of structures | Emerging Cross-Sectional Technologies | 81 | Expired |
| US6982230B2 | Deposition of hafnium oxide and/or zirconium oxide and fabrication of passivated electronic structures | Electricity | 65 | Expired |
| US6344660B1 | Thin-film field-effect transistor with organic semiconductor requiring low operating voltages | Electricity | 60 | Expired |
| US7491658B2 | Ultra low k plasma enhanced chemical vapor deposition processes using a single bifunctional precursor containing both a SiCOH matrix functionality and organic porogen functionality | Emerging Cross-Sectional Technologies | 48 | Expired |
| US6511876B2 | High mobility FETS using A1203 as a gate oxide | Electricity | 46 | Expired |
| US6255122A | Amorphous dielectric capacitors on silicon | Electricity | 31 | Expired |
| US7479306B2 | SiCOH dielectric material with improved toughness and improved Si-C bonding, semiconductor device containing the same, and method to make the same | Emerging Cross-Sectional Technologies | 18 | Active |
| US6388285B1 | Feram cell with internal oxygen source and method of oxygen release | Electricity | 16 | Expired |
| US8455292B2 | Deposition of germanium film | Emerging Cross-Sectional Technologies | 15 | Active |
| US6333202A | Flip FERAM cell and method to form same | Emerging Cross-Sectional Technologies | 14 | Expired |
| US7628974B2 | Control of carbon nanotube diameter using CVD or PECVD growth | Emerging Cross-Sectional Technologies | 13 | Expired |
| US5675028A | Bisamido azides of gallium, aluminum and indium and their use as precursors for the growth of nitride films | Chemistry; Metallurgy | 12 | Expired |
| US9472450B2 | Graphene cap for copper interconnect structures | Electricity | 12 | Active |
| US10467586B2 | Blockchain ledgers of material spectral signatures for supply chain integrity management | Electricity | 10 | Active |
| US9515252B1 | Low degradation MRAM encapsulation process using silicon-rich silicon nitride film | Electricity | 9 | Active |
| US5962654A | Alkoxyalkoxides and use to form films | Chemistry; Metallurgy | 8 | Expired |
| US8895433B2 | Method of forming a graphene cap for copper interconnect structures | Electricity | 8 | Active |
| US8623761B2 | Method of forming a graphene cap for copper interconnect structures | Electricity | 8 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.