Semiconductor device and a method for manufacturing the same
US5675176A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Sep 15, 1995 |
| Grant date | Oct 7, 1997 |
| Priority date | — |
| Expiry date | Sep 15, 2015 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/364
Abstract
A semiconductor device has a semiconductor substrate having a groove, and a semiconductor element formed in a surface region of the semiconductor substrate. A substance having a thermal expansion coefficient different from the semiconductor substrate is embedded in at least a portion of the groove, a crystal defect is generated from the region near the bottom of the groove in the semiconductor substrate, thereby alleviating stress and strain in other regions of the semiconductor substrate, such that such regions cannot generate crystal defects in a region necessary for a circuit operation of the semiconductor element of the surface region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.