Patent · US Expired

Integrated circuit device

US5675184A · kind A · utility

48Cited by
3References
8Claims
0Family size

Assignee

Inventors

Key dates

Filing dateJan 17, 1996
Grant dateOct 7, 1997
Priority date
Expiry dateJan 17, 2016

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L2924/19105
  • WIPO fieldBasic communication processes
  • WIPO sectorElectrical engineering

Abstract

An integrated circuit device includes a substrate; circuit elements including an active element and a bias line for applying a DC bias voltage to the active element, disposed on the substrate; a thermoplastic material layer disposed on a region of the substrate; and a magnetic substance layer disposed on a region of the substrate including a region of the bias line, and adhered to and supported by the thermoplastic material layer. In this structure, the magnetic substance layer can be formed in an appropriate shape and at an appropriate position on the bias line according to the oscillation characteristics of the active element, such as a transistor, and the magnetic substance layer absorbs the frequency components of the oscillation of the active element, whereby oscillation of the active element is easily prevented. Further, since the magnetic substance layer is disposed on the bias line, unwanted increase in the chip area of the integrated circuit device due to the use of the prior art oscillation preventing circuit is avoided.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.