Ferroelectric memory device
US5675530A · kind A · utility
32Cited by
4References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 1, 1996 |
| Grant date | Oct 7, 1997 |
| Priority date | — |
| Expiry date | Aug 1, 2016 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/22
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
In a ferroelectric memory device comprising a ferroelectric capacitor as the memory cell capacitor, after applying a predetermined electric field to a main body memory cell capacitor C0 or C1 to conduct a writing operation, the electric field applied to the memory cell capacitor C0 or C1 is made zero. The operation is conducted so as not to apply an electric field on the ferroelectric capacitor. As a consequence, characteristic deterioration of the ferroelectric capacitor can be reduced to prevent the malfunction of the ferroelectric memory device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.