Process for production of micropattern utilizing antireflection film
US5677111A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Oct 24, 1995 |
| Grant date | Oct 14, 1997 |
| Priority date | — |
| Expiry date | Oct 24, 2015 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S430/151
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A process for production of a micropattern, comprised of a step for forming an antireflection film comprised of an inorganic film on an underlying substrate, a step for forming a resist film on said antireflection film, a step for exposing said resist film using i-rays or light of a wavelength shorter than i-ray and transferring a mask pattern to the resist film, a step for using the resist film on which the mask pattern had been transferred as a mask to etch the antireflection film and transfer the mask pattern to the antireflection film; and a step for using the antireflection film on which said mask pattern had been transferred as a mask to etch the underlying substrate and transfer the mask pattern to the underlying substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.