Method of making wide bandgap semiconductor devices
US5677230A · kind A · utility
18Cited by
13References
21Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 1, 1995 |
| Grant date | Oct 14, 1997 |
| Priority date | — |
| Expiry date | Dec 1, 2015 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/906
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of planarizing wide bandgap semiconductor devices selected from a group including SiC, GaN and diamond having a mesa defined thereon by a trench with a depth of 1 to 2 micrometers and a width of 2 to 10 micrometers. A layer of dielectric material is deposited on the substrate overlying and surrounding the mesa, to a height approximately equal to the height of the mesa and the dielectric material is etched from atop the mesa and from a surrounding area. Layers of spin on glass are deposited to fill the surrounding area and etched to achieve a planar surface including the mesa and the layer of dielectric material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.