Semiconductor device strucutre having a two-dimensional electron gas and contact thereto

US5677553A · kind A · utility

Assignee

• Mitsubishi Electric Corporation · JP

Inventors

• Yoshitsugu Yamamoto · Tokyo, JP
• Naohito Yoshida · Itami, JP

Key dates

• Filing date: Dec 19, 1994
• Grant date: Oct 14, 1997
• Expiry date: Dec 19, 2014

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D30/4732

Abstract

A semiconductor device includes a very low dopant impurity concentration InGaAs active layer in which a two-dimensional electron gas is produced, the active layer being disposed on a semiconductor substrate; a very low dopant impurity concentration spacer layer contacting the active layer at a first surface and having an electron affinity smaller than the electron affinity of the active layer; and a very thin InGaAs electron supply layer having a high n type dopant impurity concentration and contacting the spacer layer opposite the active layer. Degradation of device characteristics due to heating of the device is reduced with a result that a thermally stable and highly reliable semiconductor device is easily realized.