Method of making a single crystals Ga*N article
US5679152A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jan 27, 1994 |
| Grant date | Oct 21, 1997 |
| Priority date | — |
| Expiry date | Jan 27, 2014 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/13
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of making a single crystal Ga*N article, including the steps of: providing a substrate of crystalline material having a surface which is epitaxially compatible with Ga*N; depositing a layer of single crystal Ga*N over the surface of the substrate; and etchably removing the substrate from the layer of single crystal Ga*N, to yield the layer of single crystal Ga*N as said single crystal Ga*N article. The invention in an article aspect relates to bulk single crystal Ga*N articles, such as are suitable for use as a substrate for the fabrication of microelectronic structures thereon, and to microelectronic devices comprising bulk single crystal Ga*N substrates, and their precursor structures.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.