Method for patterning a metal film
US5679213A · kind A · utility
17Cited by
3References
10Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Aug 9, 1994 |
| Grant date | Oct 21, 1997 |
| Priority date | — |
| Expiry date | Aug 9, 2014 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/32136
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for patterning a metal film comprises a process of removing a part of the metal film not covered with the mask by means of a dry etching method using argon gas and one of a gas containing an element to make a reactive product of the metal film to be wet-etched, and then removing the reactive product which has adhered to the metal film by means of an organic solvent.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.