Chemically amplified positive resist composition
US5679496A · kind A · utility
16Cited by
5References
16Claims
0Family size
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Key dates
| Filing date | Dec 4, 1995 |
| Grant date | Oct 21, 1997 |
| Priority date | — |
| Expiry date | Dec 4, 2015 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S430/111
- WIPO fieldOrganic fine chemistry
- WIPO sectorChemistry
Abstract
A chemically amplified positive resist composition contains a novel trifluoromethanesulfonic or p-toluenesulfonic acid sulfonium salt having at least one tert-butoxycarbonylmethoxy group as an acid labile group. The composition is highly sensitive to high energy radiation, especially KrF excimer laser and has high sensitivity, resolution and plasma etching resistance while the resulting resist pattern is heat resistant.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.