Method of making semiconductor device including high resistivity layer
US5679603A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Feb 6, 1995 |
| Grant date | Oct 21, 1997 |
| Priority date | — |
| Expiry date | Feb 6, 2015 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/917
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A high resistance compound semiconductor layer included in a semiconductor device including a plurality of compound semiconductor layers having different compositions includes a compound semiconductor that is vapor phase grown employing an organic metal compound including In, an organic metal compound including Al, and a hydrogenated compound or an organic metal compound including As. The high resistance compound semiconductor layer includes p type impurities having a concentration that positions the Fermi level of the compound semiconductor approximately at the center of the band gap of the compound semiconductor. Therefore, it is possible to produce a high resistance AlInAs layer that has less impurities that are diffused into an adjacent compound semiconductor layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.