Tantalum and niobium reagents useful in chemical vapor deposition processes, and process for depositing coatings using the same
US5679815A · kind A · utility
29Cited by
4References
15Claims
0Family size
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Key dates
| Filing date | Sep 16, 1994 |
| Grant date | Oct 21, 1997 |
| Priority date | — |
| Expiry date | Sep 16, 2014 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/405
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Niobium and tantalum compounds suitable for use as chemical vapor deposition source reagents, and a process for depositing niobium- or tantalum-containing coatings using the compounds. The compounds have formula EQU M(OR.sup.1).sub.x (R.sup.2 --C(GH)--C--C(G)--R.sup.3).sub.y wherein M is tantalum or niobium; G is oxygen or sulfur; and R.sup.1, R.sup.2, and R.sup.3 are independently selected hydrocarbyl, fluoroalkyl or alkoxy groups.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.