Semiconductor device and a single electron device
US5679962A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | May 26, 1995 |
| Grant date | Oct 21, 1997 |
| Priority date | — |
| Expiry date | May 26, 2015 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/852
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A semiconductor device includes a semi-insulating semiconductor substrate, a semiconductor layer structure including at least an undoped layer of a first semiconductor, an undoped spacer layer of a second semiconductor having an electron affinity smaller than that of the first semiconductor, and an n type electron supply layer of the second semiconductor successively laminated on the substrate, the undoped layer having a flat top surface and a flat rear surface on the flat top surface of the undoped spacer layer, having, at a top surface, a concavo-convex periodic structure, and a flat rear surface, the n-type electron supply layer of the second semiconductor having a flat top surface and a rear surface that buries concavities of the concavo-convex structure of the undoped spacer layer, and a plurality of periodically arranged Schottky electrodes on the flat top surface of the n type electron supply layer, arranged in a direction perpendicular to the concavo-convex periodic structure of the undoped spacer layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.