Manufacture of semiconductor device with ashing and etching
US5681780A · kind A · utility
34Cited by
6References
21Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 24, 1995 |
| Grant date | Oct 28, 1997 |
| Priority date | — |
| Expiry date | Mar 24, 2015 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31138
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of manufacturing a semiconductor device including the steps of: forming an insulating film on a silicon substrate; forming a resist pattern on the insulating film; etching the insulating film by using the resist pattern as an etching mask to expose a surface of the silicon substrate; and ashing the resist pattern and etching a surface layer at the exposed surface of the silicon substrate at the same time. The ashing/etching step may be performed first at a high temperature at or above 40.degree. C. and then at a lower temperature.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.