Processing method and apparatus using focused energy beam
US5683547A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jul 12, 1994 |
| Grant date | Nov 4, 1997 |
| Priority date | — |
| Expiry date | Jul 12, 2014 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/31744
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A processing method and apparatus using a focused energy beam for conducting local energy beam processing in a focused energy beam irradiating area by irradiating a sample with a focused energy beam such as an ion beam or an electron beam in an etching gas atmosphere. As the etching gas, a mixed gas different in composition from any conventional one is employed and the gas is uniformly supplied to an etching area and at least one of the components of such a mixed gas is a spontaneous reactive gas for use in etching the sample spontaneously and isotropically. With this arrangement, it is possible to subject to local etching a material for which the local etching has been impossible to provide since a single etching gas causes a reaction too fierce or causes almost nearly no reaction.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.