Method for manufacturing fluorinated gate oxide layer
US5683946A · kind A · utility
16Cited by
3References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 1, 1995 |
| Grant date | Nov 4, 1997 |
| Priority date | — |
| Expiry date | Dec 1, 2015 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/974
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for manufacturing a gate oxide layer containing fluorine is disclosed. The method includes steps of providing a substrate; depositing a fluorinated oxide layer over said substrate; and oxidizing said fluorinated oxide layer at a high temperature. The fluorinated oxide layer according to the present invention exhibits good properties in radiation hardness, hot carrier resistance and breakdown endurance. Thus, it is an excellent method for easily and cost-effectively manufacturing reliable and consistent wafers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.