Wei Lu
26Patents
5h-index
42Co-inventors
69Inventor score
Filing activity: Dec 1, 1995 → Mar 8, 2016
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US7271110B2 | High density plasma and bias RF power process to make stable FSG with less free F and SiN with less H to enhance the FSG/SiN integration reliability | Electricity | 17 | Expired |
| US5683946A | Method for manufacturing fluorinated gate oxide layer | Emerging Cross-Sectional Technologies | 16 | Expired |
| US7566656B2 | Method and apparatus for providing void structures | Electricity | 12 | Active |
| US7790617B2 | Formation of metal silicide layer over copper interconnect for reliability enhancement | Electricity | 11 | Expired |
| US7892900B2 | Integrated circuit system employing sacrificial spacers | Electricity | 7 | Active |
| US7745320B2 | Method for reducing silicide defects in integrated circuits | Electricity | 5 | Active |
| US9520371B2 | Planar passivation for pads | Electricity | 4 | Active |
| US8354347B2 | Method of forming high-k dielectric stop layer for contact hole opening | Electricity | 4 | Active |
| US9443761B2 | Methods for fabricating integrated circuits having device contacts | Electricity | 4 | Active |
| US9287197B2 | Through silicon vias | Electricity | 3 | Active |
| US9511474B2 | CMP head structure with retaining ring | Performing Operations; Transporting | 2 | Active |
| US9620418B2 | Methods for fabricating integrated circuits with improved active regions | Electricity | 2 | Active |
| US8013372B2 | Integrated circuit including a stressed dielectric layer with stable stress | Electricity | 2 | Active |
| US7855143B2 | Interconnect capping layer and method of fabrication | Electricity | 2 | Active |
| US9437547B2 | Through silicon vias | Electricity | 2 | Active |
| US8264088B2 | Planarized passivation layer for semiconductor devices | Emerging Cross-Sectional Technologies | 2 | Active |
| US9242341B2 | CMP head structure | Performing Operations; Transporting | 2 | Active |
| US7332422B2 | Method for CuO reduction by using two step nitrogen oxygen and reducing plasma treatment | Emerging Cross-Sectional Technologies | 1 | Expired |
| US9349654B2 | Isolation for embedded devices | Electricity | 1 | Active |
| US9511470B2 | CMP head structure with retaining ring | Performing Operations; Transporting | 0 | Active |
| US7998831B2 | Planarized passivation layer for semiconductor devices | Emerging Cross-Sectional Technologies | 0 | Active |
| US9153473B2 | Wafer processing | Physics | 0 | Active |
| US7960283B2 | Method for reducing silicide defects in integrated circuits | Electricity | 0 | Active |
| US9242338B2 | CMP head structure | Performing Operations; Transporting | 0 | Active |
| US9202746B2 | Integrated circuits with improved gap fill dielectric and methods for fabricating same | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.