Semiconductor photodiode having the electrodes formed on the same surface
US5684307A · kind A · utility
4Cited by
1References
6Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Oct 26, 1995 |
| Grant date | Nov 4, 1997 |
| Priority date | — |
| Expiry date | Oct 26, 2015 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F30/223
Abstract
A semiconductor optical device having a small difference in level between first and second electrodes includes, at a first electrode, a junction of a p-type contact and an electron trapping semi-insulating semiconductor region in an n-type semiconductor substrate which is rectifying. At the second electrode, a diode includes a p-type window region, a light absorption region, and the n-type semiconductor substrate. When light enters this diode, a photocurrent is generated. When a bias voltage is applied to the diode in a reverse direction, the photocurrent flows between the electrodes.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.