Focus ring for semiconductor wafer processing in a plasma reactor
US5685914A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Apr 5, 1994 |
| Grant date | Nov 11, 1997 |
| Priority date | — |
| Expiry date | Apr 5, 2014 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S156/916
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
In one aspect, the invention is embodied in a plasma reactor for processing a semiconductor wafer, the reactor having a pedestal focus ring surrounding the periphery of the wafer for reducing the process etch rate near the wafer periphery, and plural openings through the pedestal focus ring which permit passage therethrough of particulate contamination, thereby reducing accumulation of particulate contamination near the wafer periphery. In another aspect, in order to reduce corrosive wear of the chamber walls, a removable gas distribution focus ring shields the side walls of the plasma reactor from reactive gases associated with processing of the semiconductor wafer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.