Method for producing a diode

US5686319A · kind A · utility

Assignee

• Robert Bosch GmbH · DE

Inventors

• Herbert Goebel · Gräfelfing, DE
• Vesna Gobel · Reutlingen, DE

Key dates

• Filing date: Oct 10, 1995
• Grant date: Nov 11, 1997
• Expiry date: Oct 10, 2015

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y10S438/983

Abstract

In a method for producing a diode, a first, strongly positively doped silicon wafer is bonded in accordance with the silicon fusion method to a second, weakly negatively doped silicon wafer, and subsequently the weakly negatively doped second silicon wafer is ground down to a predetermined thickness. A chromium layer which contains a small percentage of arsenic is used for resistive contact-making on the negatively doped second silicon wafer. In this way, a diode is obtained which has a small forward voltage in conjunction with a precise breakdown voltage.