Herbert Goebel
21Patents
8h-index
35Co-inventors
75Inventor score
Filing activity: Jul 22, 1977 → Jun 30, 2003
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6226349A | X-ray analysis apparatus with a graded multilayer mirror | Physics | 86 | Expired |
| US5169472A | Method of making a multi-layer silicon structure | Emerging Cross-Sectional Technologies | 49 | Expired |
| US5393711A | Process for manufacturing semiconductor components | Emerging Cross-Sectional Technologies | 32 | Expired |
| US5373544A | X-ray diffractometer | Physics | 27 | Expired |
| US5541140A | Semiconductor arrangement and method for its manufacture | Electricity | 12 | Expired |
| US6240777A | Sensor having a membrane | Physics | 11 | Expired |
| US4274000A | X-ray powder diffractometer | Physics | 9 | Expired |
| US5234865A | Method of soldering together two components | Electricity | 8 | Expired |
| US5710463A | High-voltage breakover diode | Electricity | 7 | Expired |
| US4144450A | X-ray powder diffractometer | Physics | 6 | Expired |
| US6667683B1 | Planar trimming resistor, applications and method for its manufacture | Electricity | 5 | Expired |
| US4301364A | X-Ray diffractometer with high time resolution | Physics | 4 | Expired |
| US6368932B1 | Method for producing diodes | Electricity | 3 | Expired |
| US7068754B2 | System to generate therapeutic radiation | Human Necessities | 3 | Expired |
| US6101872A | Sensor having a thin film element | Physics | 3 | Expired |
| US5766973A | Method for manufacturing a semiconductor arrangement by introducing crystal disorder structures and varying diffusion rates | Emerging Cross-Sectional Technologies | 3 | Expired |
| US5759909A | Method for manufacturing a silicon wafer by using a dopant foil | Electricity | 2 | Expired |
| US6716714B1 | Semiconductor diode and method for producing the same | Electricity | 2 | Expired |
| US5691892A | Rectifier arrangement for a three-phase generator | Electricity | 2 | Expired |
| US7012026B2 | Method for producing defined polycrystalline silicon areas in an amorphous silicon layer | Electricity | 1 | Expired |
| US5686319A | Method for producing a diode | Emerging Cross-Sectional Technologies | 0 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.