Semiconductor device and process for fabricating the same
US5686328A · kind A · utility
172Cited by
5References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 11, 1994 |
| Grant date | Nov 11, 1997 |
| Priority date | — |
| Expiry date | Jul 11, 2014 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/481
Abstract
A semiconductor device suitable for active-matrix addressed liquid crystal display device equipped with pixel electrodes and comprising a thin film transistor and a capacitor formed on the same insulation substrate, provided that said capacitor is formed from an oxide insulation film provided on the lower electrode and a silicon nitride film. Highly reliable thin film transistors and capacitors can be obtained.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.