Semiconductor device and manufacturing method thereof
US5686353A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Dec 21, 1995 |
| Grant date | Nov 11, 1997 |
| Priority date | — |
| Expiry date | Dec 21, 2015 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/14
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An electrode terminal (5) provided on a surface of a semiconductor chip (4) has a square shape in plane view. Further, the projecting apex portion (8a) of a bump (8) provided on the electrode terminal (5) orients to a corner portion (5a) of the electrode terminal (5). Hereupon, a gold ball (2a) formed by melting the lower end portion of a gold wire (2) supplied through a capillary (1) is joined to the electrode terminal (5), and then the capillary (1) is moved in the direction of a diagonal line of the square electrode (5). Thus, the main portion of the gold wire (2) is separated from the gold ball (2a) so that the bump (8) is formed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.