Silicon-on-insulator (SOI) transistor
US5686735A · kind A · utility
14Cited by
4References
2Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Feb 17, 1995 |
| Grant date | Nov 11, 1997 |
| Priority date | — |
| Expiry date | Feb 17, 2015 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6744
Abstract
An SOI transistor whose source region and/or drain region have a heterostructure made up of at least two different semiconductor materials, to thereby prevent a bipolar-induced breakdown.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.