Ion implantation helicon plasma source with magnetic dipoles
US5686796A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Dec 20, 1995 |
| Grant date | Nov 11, 1997 |
| Priority date | — |
| Expiry date | Dec 20, 2015 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH05H1/46
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Disclosed is an ion implantation source for producing a plasma with an electron cyclotron resonance zone including a chamber for plasma processing and having at least one extraction slit, said extraction slit situated at a first end of the chamber; at least one antenna encircling the chamber for prodding a radio frequency induced electromagnetic field to generate an inductive/helicon plasma within the chamber; a plurality of magnetic dipoles at the periphery of the chamber; and at least one magnetic dipole at a second end of the chamber; the magnetic dipoles at the periphery and second end of the chamber having their fields directed towards the interior of the chamber, wherein the fields are adjacent to the periphery and the second end of the chamber and keep the plasma spaced from the periphery and the second end of the chamber.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.